IndiumV3, Main, Repository, bibRecord, 000362

The effect of annealing on the physical properties of thermally evaporated CuIn2n+1S3n+2 thin films (n = 0,1, 2 and 3)

Identifieur interne : 000362 ( Main/Repository ); précédent : 000361; suivant : 000363

The effect of annealing on the physical properties of thermally evaporated CuIn2n+1S3n+2 thin films (n = 0,1, 2 and 3)

Auteurs : RBID : Pascal:13-0363044

Descripteurs français

Pascal (Inist)
- Recuit thermique, Propriété physique, Propriété électrique, Caractéristique électrique, Caractéristique optique, Propriété optique, Dépôt sous vide, Evaporation sous vide, Diffraction RX, Analyse donnée, Constante optique, Indice réfraction, Epaisseur optique, Transition optique, Ventilateur, Constante diélectrique, Dépôt phase vapeur, Couche mince, Composé ternaire, Sulfure de cuivre, Sulfure d'indium, Structure chalcopyrite, Réseau cubique, Spinelles, 7867, 6146, CuInS2.

English descriptors

KwdEn :
- Blowers, Chalcopyrite structure, Copper sulfide, Cubic lattices, Data analysis, Electrical characteristic, Electrical properties, Indium sulfide, Optical characteristic, Optical constants, Optical properties, Optical thickness, Optical transition, Permittivity, Physical properties, Refractive index, Spinels, Ternary compounds, Thermal annealing, Thin films, Vacuum deposition, Vacuum evaporation, Vapor deposition, XRD.

Abstract

In this study, the annealing effect on structural, electrical and optical properties of CuIn_2n ₊₁S_3n+2 thin films (n = 0,1, 2 and 3) are investigated. CuIn_2n+1S_3n+2 films were elaborated by vacuum thermal evaporation and annealed at 150 and 250 °C during 2 h in air atmosphere. XRD data analysis shows that CuInS₂ and CuIn₃S₅ (n = 0 and 1) crystallize in the chalcopyrite structure according to a preferential direction (112), CuIn₅S₈ and CuIn₇S₁₁ (n=2 and 3) crystallize in the cubic spinel structure with a preferential direction (311). The optical characterization allowed us to determine the optical constants (refractive indexes 2.2-3.1, optical thicknesses 250-500 nm, coefficients of absorption 10⁵cm^-1, coefficients of extinction < 1, and the values of the optical transitions 1.80- 2.22 eV) of the samples of all materials. We exploited the models of Cauchy, Wemple-DiDomenico and Spitzer-Fan for the analysis of the dispersion of the refractive index and the determination of the optical and dielectric constants.

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Le document en format XML

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S<sub>3n+2</sub>
 thin films (n = 0,1, 2 and 3)</title>
<author><name sortKey="Abdelkader, D" uniqKey="Abdelkader D">D. Abdelkader</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire de Photovoltaique et Matériaux Semi-conducteurs, ENIT, Université Tunis ElManar, BP 37</s1>
<s2>Le belvédère, 1002 Tunis</s2>
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<country>Tunisie</country>
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<author><name sortKey="Khemiri, N" uniqKey="Khemiri N">N. Khemiri</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire de Photovoltaique et Matériaux Semi-conducteurs, ENIT, Université Tunis ElManar, BP 37</s1>
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<author><name sortKey="Kanzari, M" uniqKey="Kanzari M">M. Kanzari</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire de Photovoltaique et Matériaux Semi-conducteurs, ENIT, Université Tunis ElManar, BP 37</s1>
<s2>Le belvédère, 1002 Tunis</s2>
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<seriesStmt><idno type="ISSN">1369-8001</idno>
<title level="j" type="abbreviated">Mater. sci. semicond. process.</title>
<title level="j" type="main">Materials science in semiconductor processing</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Blowers</term>
<term>Chalcopyrite structure</term>
<term>Copper sulfide</term>
<term>Cubic lattices</term>
<term>Data analysis</term>
<term>Electrical characteristic</term>
<term>Electrical properties</term>
<term>Indium sulfide</term>
<term>Optical characteristic</term>
<term>Optical constants</term>
<term>Optical properties</term>
<term>Optical thickness</term>
<term>Optical transition</term>
<term>Permittivity</term>
<term>Physical properties</term>
<term>Refractive index</term>
<term>Spinels</term>
<term>Ternary compounds</term>
<term>Thermal annealing</term>
<term>Thin films</term>
<term>Vacuum deposition</term>
<term>Vacuum evaporation</term>
<term>Vapor deposition</term>
<term>XRD</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Recuit thermique</term>
<term>Propriété physique</term>
<term>Propriété électrique</term>
<term>Caractéristique électrique</term>
<term>Caractéristique optique</term>
<term>Propriété optique</term>
<term>Dépôt sous vide</term>
<term>Evaporation sous vide</term>
<term>Diffraction RX</term>
<term>Analyse donnée</term>
<term>Constante optique</term>
<term>Indice réfraction</term>
<term>Epaisseur optique</term>
<term>Transition optique</term>
<term>Ventilateur</term>
<term>Constante diélectrique</term>
<term>Dépôt phase vapeur</term>
<term>Couche mince</term>
<term>Composé ternaire</term>
<term>Sulfure de cuivre</term>
<term>Sulfure d'indium</term>
<term>Structure chalcopyrite</term>
<term>Réseau cubique</term>
<term>Spinelles</term>
<term>7867</term>
<term>6146</term>
<term>CuInS2</term>
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<front><div type="abstract" xml:lang="en">In this study, the annealing effect on structural, electrical and optical properties of CuIn<sub>2n</sub>
 <sub>+1</sub>
S<sub>3n+2</sub>
 thin films (n = 0,1, 2 and 3) are investigated. CuIn<sub>2n+1</sub>
S<sub>3n+2</sub>
 films were elaborated by vacuum thermal evaporation and annealed at 150 and 250 °C during 2 h in air atmosphere. XRD data analysis shows that CuInS<sub>2</sub>
 and CuIn<sub>3</sub>
S<sub>5</sub>
 (n = 0 and 1) crystallize in the chalcopyrite structure according to a preferential direction (112), CuIn<sub>5</sub>
S<sub>8</sub>
 and CuIn<sub>7</sub>
S<sub>11</sub>
 (n=2 and 3) crystallize in the cubic spinel structure with a preferential direction (311). The optical characterization allowed us to determine the optical constants (refractive indexes 2.2-3.1, optical thicknesses 250-500 nm, coefficients of absorption 10<sup>5 </sup>
cm<sup>-1</sup>
, coefficients of extinction < 1, and the values of the optical transitions 1.80- 2.22 eV) of the samples of all materials. We exploited the models of Cauchy, Wemple-DiDomenico and Spitzer-Fan for the analysis of the dispersion of the refractive index and the determination of the optical and dielectric constants.</div>
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S<sub>3n+2</sub>
 thin films (n = 0,1, 2 and 3)</s1>
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<s2>Le belvédère, 1002 Tunis</s2>
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<fC01 i1="01" l="ENG"><s0>In this study, the annealing effect on structural, electrical and optical properties of CuIn<sub>2n</sub>
 <sub>+1</sub>
S<sub>3n+2</sub>
 thin films (n = 0,1, 2 and 3) are investigated. CuIn<sub>2n+1</sub>
S<sub>3n+2</sub>
 films were elaborated by vacuum thermal evaporation and annealed at 150 and 250 °C during 2 h in air atmosphere. XRD data analysis shows that CuInS<sub>2</sub>
 and CuIn<sub>3</sub>
S<sub>5</sub>
 (n = 0 and 1) crystallize in the chalcopyrite structure according to a preferential direction (112), CuIn<sub>5</sub>
S<sub>8</sub>
 and CuIn<sub>7</sub>
S<sub>11</sub>
 (n=2 and 3) crystallize in the cubic spinel structure with a preferential direction (311). The optical characterization allowed us to determine the optical constants (refractive indexes 2.2-3.1, optical thicknesses 250-500 nm, coefficients of absorption 10<sup>5 </sup>
cm<sup>-1</sup>
, coefficients of extinction < 1, and the values of the optical transitions 1.80- 2.22 eV) of the samples of all materials. We exploited the models of Cauchy, Wemple-DiDomenico and Spitzer-Fan for the analysis of the dispersion of the refractive index and the determination of the optical and dielectric constants.</s0>
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<s5>07</s5>
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<s5>07</s5>
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<s5>10</s5>
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<s5>13</s5>
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<s5>13</s5>
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<s5>13</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Transition optique</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Optical transition</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Transición óptica</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Ventilateur</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Blowers</s0>
<s5>15</s5>
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<fC03 i1="16" i2="3" l="FRE"><s0>Constante diélectrique</s0>
<s5>16</s5>
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<s5>16</s5>
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<fC03 i1="17" i2="3" l="FRE"><s0>Dépôt phase vapeur</s0>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>Vapor deposition</s0>
<s5>17</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Couche mince</s0>
<s5>22</s5>
</fC03>
<fC03 i1="18" i2="3" l="ENG"><s0>Thin films</s0>
<s5>22</s5>
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<s5>23</s5>
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<s5>23</s5>
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<s5>24</s5>
</fC03>
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<s5>24</s5>
</fC03>
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<s5>24</s5>
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<s5>25</s5>
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<s5>25</s5>
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<s5>25</s5>
</fC03>
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<s5>26</s5>
</fC03>
<fC03 i1="22" i2="X" l="ENG"><s0>Chalcopyrite structure</s0>
<s5>26</s5>
</fC03>
<fC03 i1="22" i2="X" l="SPA"><s0>Estructura calcopirita</s0>
<s5>26</s5>
</fC03>
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<s5>27</s5>
</fC03>
<fC03 i1="23" i2="3" l="ENG"><s0>Cubic lattices</s0>
<s5>27</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>Spinelles</s0>
<s5>28</s5>
</fC03>
<fC03 i1="24" i2="3" l="ENG"><s0>Spinels</s0>
<s5>28</s5>
</fC03>
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<s4>INC</s4>
<s5>56</s5>
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<s4>INC</s4>
<s5>57</s5>
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<s4>INC</s4>
<s5>82</s5>
</fC03>
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<s5>18</s5>
</fC07>
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<s5>18</s5>
</fC07>
<fN21><s1>343</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
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The effect of annealing on the physical properties of thermally evaporated CuIn2n+1S3n+2 thin films (n = 0,1, 2 and 3)

The effect of annealing on the physical properties of thermally evaporated CuIn2n+1S3n+2 thin films (n = 0,1, 2 and 3)

Descripteurs français

English descriptors

Abstract

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